Revealing the crystal structures and relative dielectric constants of fluorinated silicon oxides

Author:

Xue Pengyan12,Feng Junwei3,Xie Congwei134ORCID,Wang Lan2,Tudi Abudukadi3,Tikhonov Evgenii V.12,Butler Keith T.5

Affiliation:

1. International Center for Materials Discovery, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi’an, Shaanxi, 710072, China

2. State Key Laboratory of Solidification Processing, School of Material Science and Engineering, Northwestern Polytechnical University, Xi’an, Shaanxi, 710072, China

3. CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS; Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China

4. Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 143026, 3 Nobel Street, Moscow, Russian Federation

5. Department of Chemistry, University of Reading, Whiteknights, RG6 6AH, UK

Abstract

In this work, we show that the levels of fluorine doped into silica are high enough and we have predicted some hitherto unknown fluorinated silica with expected properties.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Reference37 articles.

1. S. R.Wilson , C. J.Tracy and J. L.Freeman Jr , Handbook of Multilevel Metallization for Integrated Circuits: Materials, Technology, and Applications , Noyes Publications , Park Ridge , 1993

2. Low-k dielectric materials

3. Low Dielectric Constant Materials

4. Pure-Silica-Zeolite MFI and MEL Low-Dielectric-Constant Films with Fluoro-Organic Functionalization

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