Increasing porosity in hydrogen-bonded organic frameworks for low-<i>κ</i>interlayer dielectric-Reference-Cited by-同舟云学术

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Increasing porosity in hydrogen-bonded organic frameworks for low-κinterlayer dielectric

Published:2023 Issue:15 Volume:10 Page:4503-4509
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Song Yanchao¹,Zhu Shiyuan¹,Liu Lizhen²^ORCID,Xiang Shengchang¹^ORCID,Yao Zizhu¹^ORCID,Zhang Zhangjing¹^ORCID

Affiliation:

1. Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 350007, PR China

2. School of Materials Science and Engineering, Fujian University of Technology, Fujian 350118, China

Abstract

Herein, two HOFs with different porosities have been obtained by tuning the reaction temperature. The dielectric constant of HOF-FJU-57a at 298 K and 1 MHz is 2.18, which is the first example of an HOF with an ultra-low dielectric constant.

Funder

National Natural Science Foundation of China

Fujian Provincial Department of Science and Technology

State Key Laboratory of Structural Chemistry

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/QI/D3QI00570D

Reference66 articles.

1. Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

2. Impact of Wire Geometry on Interconnect RC and Circuit Delay

3. The low dielectric constant and relaxation dielectric behavior in hydrogen-bonding metal–organic frameworks

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