Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer-Reference-Cited by-同舟云学术

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

Published:2020 Issue:7 Volume:22 Page:1160-1165
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Huang Yingnan¹²³⁴⁵^ORCID,Liu Jianxun⁵⁶⁷⁸⁴^ORCID,Sun Xiujian⁵⁶⁷⁸⁴,Zhan Xiaoning⁵⁶⁷⁸⁴,Sun Qian¹²³⁴⁵,Gao Hongwei⁵⁶⁷⁸⁴,Feng Meixin¹²³⁴⁵,Zhou Yu¹²³⁴⁵,Ikeda Masao⁵⁶⁷⁸⁴,Yang Hui¹²³⁴⁵

Affiliation:

1. School of Nano-Tech and Nano-Bionics

2. University of Science and Technology of China

3. Hefei 230026

4. China

5. Key Laboratory of Nanodevices and Applications

6. Suzhou Institute of Nano-Tech and Nano-Bionics

7. Chinese Academy of Sciences (CAS)

8. Suzhou 215123

Abstract

We reported the successful growth of a crack-free high-quality 2 μm-thick Al_0.5Ga_0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Natural Science Foundation of Jiangsu Province

Jiangsu Provincial Key Research and Development Program

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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