Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy-Reference-Cited by-同舟云学术

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Published:2018-08-13 Issue:7 Volume:113 Page:072107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Luo Weike¹²,Liu Bin¹,Li Zhonghui²,Li Liang²,Yang Qiankun²,Pan Lei²,Li Chuanhao²,Zhang Dongguo²,Dong Xun²,Peng Daqing²,Yang Feng²,Zhang Rong¹

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, People's Republic of China

Funder

The national key research and development program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5040334

Reference30 articles.

1. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

2. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates