Visible to near-infrared photodetector with novel optoelectronic performance based on graphene/S-doped InSe heterostructure on h-BN substrate-Reference-Cited by-同舟云学术

Visible to near-infrared photodetector with novel optoelectronic performance based on graphene/S-doped InSe heterostructure on h-BN substrate

Published:2020 Issue:37 Volume:12 Page:19259-19266
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hao Qiaoyan¹²³⁴,Liu Jidong¹²³⁴,Dong Weilong¹²³⁴,Yi Huan¹²³⁴,Ke Yuxuan¹²³⁴,Tang Sisi¹²³⁴,Qi Dianyu¹²³⁴^ORCID,Zhang Wenjing¹²³⁴^ORCID

Affiliation:

1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology

2. Shenzhen University

3. Shenzhen 518060

4. China

Abstract

We demonstrate a graphene/S-doped InSe heterostructure with preeminent photoresponse performance and broadband photodetection. Remarkably, the devices exhibit uniformly positive photocurrent when the polarity of the gate voltage is adjusted.

Funder

Shenzhen Peacock Plan

Science and Technology Planning Project of Guangdong Province

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR04338A

Reference43 articles.

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