Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices-Reference-Cited by-同舟云学术

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Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

Published:2023-05 Issue:3 Volume:9 Page:527-540
ISSN:2352-8478
Container-title:Journal of Materiomics
language:en
Short-container-title:Journal of Materiomics

Author:

Hao Qiaoyan,Li Peng,Liu Jidong,Huang Jiarui,Zhang Wenjing

Funder

Shenzhen Peacock Plan

Department of Education of Guangdong Province

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

Elsevier BV

Subject

Metals and Alloys,Surfaces, Coatings and Films,Electronic, Optical and Magnetic Materials

Reference88 articles.

1. Recent development of two-dimensional transition metal dichalcogenides and their applications;Choi;Mater Today,2017

2. Synthesis and emerging properties of 2D layered III-VI metal chalcogenides;Cai;Appl Phys Rev,2019

3. Recent progress on 2D noble-transition-metal dichalcogenides;Pi;Adv Funct Mater,2019

4. Two-dimensional noble-metal chalcogenides and phosphochalcogenides;Kempt;Angew Chem Int Ed Engl,2020

5. Field-effect transistors made from solution-grown two-dimensional tellurene;Wang;Nat Electron,2018

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1. Quasi-2D material based heterostructure devices and its applications;Journal of Physics D: Applied Physics;2024-08-13

2. Effect of thickness on optical properties of InSe/In2Se3 heterojunction;AIP Advances;2024-08-01

3. Synthesis of visible-light-activated CeO2-x/BiCrO3 photocatalysts with S-scheme mechanism: Effectual performances in detoxification of various antibiotics and organic pollutants;Journal of Environmental Management;2024-08

4. Bulk photovoltaic effect in ferroelectrics;Japanese Journal of Applied Physics;2024-06-03

5. Cu6GeWS8: A Two-Dimensional Quaternary Sulfide with Direct Bandgap and Ultralow Lattice Thermal Conductivity;Journal of Electronic Materials;2024-05-22

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