Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors
Author:
Affiliation:
1. Department of Chemical and Biological Engineering
2. Korea University
3. Seoul 02841
4. South Korea
5. Korea Electrotechnology Research Institute (KERI)
6. Changwon-si
Abstract
Field-plated β-Ga2O3 nanoFETs with a breakdown voltage of over 300 V pave a way for downsizing power electronic devices.
Funder
National Research Foundation of Korea
Korea Institute of Energy Technology Evaluation and Planning
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA01163C
Reference38 articles.
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