A high-breakdown-voltage β-Ga<sub>2</sub>O<sub>3</sub> nanoFET with a beveled field-plate structure-Reference-Cited by-同舟云学术

A high-breakdown-voltage β-Ga₂O₃ nanoFET with a beveled field-plate structure

Published:2024 Issue:17 Volume:12 Page:6193-6200
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Jeongmin¹^ORCID,Kim Hyeongwoo²^ORCID,Kang Inho²,Kim Junghun²,Ko Seokjin¹,Bae Jinho³,Kim Jihyun¹^ORCID

Affiliation:

1. Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea

2. Korea Electrotechnology Research Institute (KERI), Seongsan-gu, Changwon-si, Gyeongsangnam-do 51543, Republic of Korea

3. Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea

Abstract

The three-terminal off-state breakdown voltage of the β-Ga2O3 nanoFET with beveled field-plate (FP) was obtained at +441 V, enhanced by downstream plasma-etched 60° h-BN FP structure.

Funder

Korea Institute for Advancement of Technology

Defense Acquisition Program Administration

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00106K

Reference45 articles.

1. Perspective—Opportunities and Future Directions for Ga2O3

2. G.Jessen , K.Chabak , A.Green , J.McCandless , S.Tetlak , K.Leedy , R.Fitch , S.Mou , E.Heller , S.Badescu , A.Crespo and N.Moser , Device Research Conference - Conference Digest , DRC, 2017 , 25 , 12

3. M.Elbuluk and A.Hammoud , Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), 2005 , 2 , 14421448

4. J.Hornberger , A. B.Lostetter , K. J.Olejniczak , T.McNutt , S. M.Lal and A.Mantooth , IEEE Aerospace Conference Proceedings , 2004 , 4 , 25382555

5. B. K.Bose , Proceedings of the 2000 IEEE International Symposium on Industrial Electronics, 2000 , 1 , TU1-T14

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

2. Gate mesa terminal with drain-field-plated β-Ga₂O₃ MOSFET with ultra-high power figure of merit;Engineering Research Express;2024-08-29