Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures-Reference-Cited by-同舟云学术

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Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures

Published:2018 Issue:20 Volume:20 Page:13890-13895
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Michałowski Paweł Piotr¹²³^ORCID,Złotnik Sebastian¹²³^ORCID,Sitek Jakub¹²³^ORCID,Rosiński Krzysztof¹²³,Rudziński Mariusz¹²³

Affiliation:

1. Institute of Electronic Materials Technology

2. 01-919 Warsaw

3. Poland

Abstract

Oxygen breaks up Mg–H complexes and induces high diffusion of Mg in GaN/AlGaN heterostructures.

Funder

Narodowe Centrum Nauki

Narodowe Centrum Badań i Rozwoju

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP01470A

Reference31 articles.

1. M. Crawford , in Semiconductors and Semimetals , ed. Z. Mi and C. Jagadish , Elsevier , 2017 , ch. 1, pp. 3–44

2. Review—The Current and Emerging Applications of the III-Nitrides

3. First-principles theory of acceptors in nitride semiconductors

4. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures

5. Doping of III-nitride materials

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1. Dependence of oxygen impurity concentration in AlN on the surface roughness during growth;Journal of Applied Physics;2024-04-28

2. Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer;Materials;2023-12-28

3. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing;Journal of Applied Physics;2023-07-18

4. Growth of p-type GaN – The role of oxygen in activation of Mg-doping;Power Electronic Devices and Components;2023-06

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