Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template-Reference-Cited by-同舟云学术

Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template

Published:2016 Issue:88 Volume:6 Page:84794-84800
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lin Yunhao¹²³⁴⁵,Yang Meijuan¹²³⁴⁵,Wang Wenliang¹²³⁴⁵,Lin Zhiting¹²³⁴⁵,Li Guoqiang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640

4. China

5. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province

Abstract

High-quality crack-free GaN epitaxial films were successfully grown on Si(111) substrates using metal–organic chemical vapor deposition by in situ depositing SiN on a 3-dimensional (3D) GaN template.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA16842F

Reference39 articles.

1. Substrates for gallium nitride epitaxy

2. Prospects of III-nitride optoelectronics grown on Si

3. Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator

4. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

5. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

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