Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/7177154/07153567.pdf?arnumber=7153567
Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A parameter design method of LC filter circuit for closed‐loop dynamic power supply system based on linear power amplifier;IET Power Electronics;2024-07
2. A Sub-Nanosecond Gate Bias-Switching Circuit for GaN RF Power Amplifiers;IEEE Microwave and Wireless Technology Letters;2024-02
3. Deliberate Source/Load Mismatch for Linearity and Efficiency of Discrete Supply Modulated GaN PAs;IEEE Transactions on Microwave Theory and Techniques;2024
4. Architectures for Efficiency Enhancement in Power Amplifiers;Journal of The Institution of Engineers (India): Series B;2023-12-08
5. Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity;Applied Physics Letters;2023-11-13
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