Elimination of interlayer Schottky barrier in borophene/C4N4 vdW heterojunctions via Li-ion adsorption for tunneling photodiodes-Reference-Cited by-同舟云学术

Elimination of interlayer Schottky barrier in borophene/C4N4 vdW heterojunctions via Li-ion adsorption for tunneling photodiodes

Published:2021 Issue:12 Volume:9 Page:4206-4216
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zheng Cancan¹²³⁴⁵,Zhou Cong¹²³⁴⁵,Shi Man¹²³⁴⁵,Li Haiyan¹²³⁴⁵,Dou Nianxi¹²³⁴⁵,Ma Zhihao¹²³⁴⁵,Xia Feifei⁶⁷⁸⁵,He Yuanyuan¹²³⁴⁵^ORCID,Zhao Jianwei¹²³⁴⁵

Affiliation:

1. College of Material and Textile Engineering

2. Key Laboratory of Yarn Materials Forming and Composite Processing Technology

3. Jiaxing University

4. Jiaxing

5. People's Republic of China

6. School of Chemical and Environmental Engineering

7. Jiangsu University of Technology

8. Changzhou

Abstract

The adsorption of Li-ions on the bottom site contributes to improve the photodetectivity and photoresponsivity in B/C₄N₄ vdW heterojunction photodiode, owing to the elimination of interlayer Schottky barrier.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05943A

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