Investigation of traps in strained‐well InGaAs/GaAsSb quantum well photodiodes
Author:
Affiliation:
1. Department of Electrical EngineeringUniversity of Notre DameNotre DameIN46556USA
2. Department of Electrical and Computer EngineeringUniversity of VirginiaCharlottesvilleVA22904USA
Funder
Division of Materials Research
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.2191
Reference10 articles.
1. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
2. MOVPE grown InGaAs/GaAsSb type II quantum well photodiode for SWIR focal plane array
3. Design and characterization of strained InGaAs/GaAsSb type-II ‘W’ quantum wells on InP substrates for mid-IR emission
4. Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes
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