Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector-Reference-Cited by-同舟云学术

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Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

Published:2019-09 Issue: Volume:101 Page:133-137
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Deng Zhuo,Guo Daqian,Burguete Claudia González,Xie Zongheng,Huang Jian,Liu Huiyun,Wu Jiang,Chen Baile

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications;Sood,2018

2. Recent progress in infrared detector technologies;Rogalski;Infr. Phys. Technol.,2011

3. Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors;Plis;Infr. Phys. Technol.,2011

4. nBn structure based on InAs∕GaSb type-II strained layer superlattices;Rodriguez;Appl. Phys. Lett.,2007

5. Mid-wavelength high operating temperature barrier infrared detector and focal plane array;Ting;Appl. Phys. Lett.,2018

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1. Long infrared detector based on Se-hyperdoped black silicon;Journal of Physics D: Applied Physics;2024-04-29

2. Enhancing the performance of an InAsSb/InAlSb-based pBn photodetector for early detection of a biomarker of bone marrow cancer: a proposed and simulated approach with extended-midwave response and step-graded barrier design;Sensing and Imaging;2024-04-22

3. Design of Novel Photodetector Array in Optical Communication Systems and Optimization of Signal Processing Algorithm;Journal of Nanoelectronics and Optoelectronics;2024-02-01

4. Recent Progress in III–V Photodetectors Grown on Silicon;Photonics;2023-05-14

5. High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon;IEEE Journal of Quantum Electronics;2023-04

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