Abstract
Abstract
Infrared (IR) detectors play crucial roles in various applications. A significant milestone in advancing the next-generation low-cost silicon technology is the enhancement of hyperdoped black silicon (b-Si) photodetectors, particularly within the IR wavelength range. In this study, highly selenium (Se)-doped b-Si photodetectors. Through the optimization of laser parameters and the application of SiO2 passivation, significant enhancements were achieved in responsivity (R), external quantum efficiency, and specific detectivity (D*) within the long-wave IR range, culminating in a D* of 1.3 × 1012 Jones at 9.5 μm. Additionally, the Se: b-Si photodetectors maintain a D* of approximately 1.3 × 1011 Jones at critical optical telecommunications wavelengths of 1.3 μm and 1.5 μm. These results significantly contribute to the advancement of IR photodetector technology and provide a foundation for the development of highly efficient, low-cost, and broadband IR detectors for Si photonic applications.