Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Author:

Chao Calvin Yi-PingORCID,Yeh Shang-Fu,Wu Meng-Hsu,Chou Kuo-Yu,Tu Honyih,Lee Chih-Lin,Yin Chin,Paillet Philippe,Goiffon VincentORCID

Abstract

In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference49 articles.

1. Sony IMX586, 48 MP, 0.8 μm pixel pitch, stacked BI CIS from the Huawei V20 Pro real Camera. TechInsights Device Essentials Plus Summary. DEP-1901-801 https://www.techinsights.com/products/dep-1901-801

2. Sony Releases Stacked CMOS Image Sensor for Smartphones with Industry’s Highest 48 Effective Megapixels, Featuring World First Ultra-Compact Pixel Size of 0.8 μm https://www.sony.net/SonyInfo/News/Press/201807/18-060E/index.html

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