Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications-Reference-Cited by-同舟云学术

Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

Published:2020 Issue:15 Volume:8 Page:5071-5081
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liu Zeng¹²³⁴⁵^ORCID,Li Shan¹²³⁴⁵^ORCID,Yan Zuyong¹²³⁴⁵^ORCID,Liu Yuanyuan⁶⁷⁸⁵⁹,Zhi Yusong¹²³⁴⁵,Wang Xia¹²³⁴⁵^ORCID,Wu Zhenping¹²³⁴⁵^ORCID,Li Peigang¹²³⁴⁵^ORCID,Tang Weihua¹²³⁴⁵^ORCID

Affiliation:

1. Laboratory of Information Functional Materials and Devices

2. School of Science

3. Beijing University of Posts and Telecommunications

4. Beijing 100876

5. China

6. Center of Materials Science and Optoelectronics Engineering

7. University of Chinese Academy of Sciences

8. Beijing 100049

9. The Engineering Research Center for Semiconductor Integrated Technology

Abstract

A dual-mode, sensitive β-Ga₂O₃ MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 10¹¹ Jones.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC00100G

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