Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors-Reference-Cited by-同舟云学术

Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

Published:2024-05-01 Issue:9 Volume:24 Page:14109-14117
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Tian Chengyi¹^ORCID,Zhang Chuanlun¹,Lin Jialong¹^ORCID,Zhang Jie¹^ORCID,Yang Weifeng¹^ORCID

Affiliation:

1. Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, China

Funder

National Natural Science Foundation of China

Fujian Minjiang Distinguished Scholar Program and Xiamen Double-Hundred-Talent Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7361/10516472/10472425.pdf?arnumber=10472425

Reference52 articles.

1. Ultrawide-bandgap semiconductors: An overview

2. 2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension

3. Ultra-wide bandgap semiconductor Ga2O3 power diodes

4. A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

5. Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

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