2.5 kV Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Rectifier With Graded Junction Termination Extension-Reference-Cited by-同舟云学术

2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension

Published:2023-02 Issue:2 Volume:44 Page:221-224
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Boyan¹^ORCID,Xiao Ming¹^ORCID,Spencer Joseph¹,Qin Yuan¹^ORCID,Sasaki Kohei²^ORCID,Tadjer Marko J.³^ORCID,Zhang Yuhao¹^ORCID

Affiliation:

1. Center of Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

2. Novel Crystal Technology Inc., Sayama, Japan

3. Naval Research Laboratory, Washington, DC, USA

Funder

National Science Foundation

Center for Power Electronics Systems High Density Integration Industry Consortium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10027614/9984647-aam.pdf

Reference31 articles.

1. Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

2. High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2

3. 2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers

4. Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications

5. Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

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