Anisotropic charge transfer and gate tuning for p-SnS/n-MoS<sub>2</sub> vertical van der Waals diodes-Reference-Cited by-同舟云学术

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS₂ vertical van der Waals diodes

Published:2023 Issue:37 Volume:15 Page:15344-15351
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yuan Hui¹,Xu Ruihan¹,Ren Jiale¹,Yang Jielin¹,Wang Shouyang¹,Tian Dongwen¹,Fu Yingshuang²^ORCID,Li Quan³^ORCID,Peng Xiaoniu¹,Wang Xina¹^ORCID

Affiliation:

1. School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China

2. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China

3. Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China

Abstract

p-SnS/n-MoS2 van der Waals heterostructure diodes with an ideality factor of ∼ 1.1 and high rectification ratio have been achieved, where a strong gate-dependent anisotropic rectification property has been tuned with the SnS channel length.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR03508E

Reference47 articles.

1. Few‐layered MoS ₂ Based Vertical van der Waals p‐n Homojunction by Highly‐efficient N ₂ Plasma Implantation

2. Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

3. Atomically Thin MoS2: A Versatile Nongraphene 2D Material

4. Sensing Behavior of Atomically Thin-Layered MoS2 Transistors

5. High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors

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