Few‐layered MoS <sub>2</sub> Based Vertical van der Waals p‐n Homojunction by Highly‐efficient N <sub>2</sub> Plasma Implantation-Reference-Cited by-同舟云学术

Few‐layered MoS ₂ Based Vertical van der Waals p‐n Homojunction by Highly‐efficient N ₂ Plasma Implantation

Author:

Shan Yufeng¹²³⁴,Yin Ziwei²³,Zhu Jiaqi¹²³,Li Xin²³,Dou Wei²³,Wang Yue²³,Liu Chixian²³,Deng Huiyong²³⁴^ORCID,Dai Ning¹²³⁴⁵

Affiliation:

1. Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China

2. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

3. University of Chinese Academy of Sciences Beijing China

4. Zhejiang Lab Hangzhou 311100 China

5. Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering Changzhou 213164 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference49 articles.

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