WSe 2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing-Reference-Cited by-同舟云学术

WSe 2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

Published:2019-08-25 Issue:41 Volume:15 Page:1902770
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Pang Chin‐Sheng¹^ORCID,Chen Chin‐Yi²,Ameen Tarek²,Zhang Shengjiao¹,Ilatikhameneh Hesameddin²,Rahman Rajib³,Klimeck Gerhard²,Chen Zhihong¹

Affiliation:

1. Birck Nanotechnology Center Department of Electrical and Computer Engineering Purdue University 1205 W State St West Lafayette IN 47907 USA

2. Network for Computational Nanotechnology Department of Electrical and Computer Engineering Purdue University 610 Purdue Mall West Lafayette IN 47907 USA

3. School of Physics University of New South Wales Sydney NSW 2052 Australia

Funder

Semiconductor Research Corporation

National Institute of Standards and Technology

Microelectronics Advanced Research Corporation

Defense Advanced Research Projects Agency

National Science Foundation

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201902770

Reference43 articles.

1. Why all the fuss about 2D semiconductors?

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4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

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