Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector
Author:
Funder
Department of Science and Technology
Publisher
Elsevier BV
Reference39 articles.
1. Ultrabroadband and high-detectivity photodetector based on WS2/Ge heterojunction through defect engineering and interface passivation;Wu;ACS Nano,2021
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3. Multilayered PdSe2/perovskite Schottky junction for fast, self-powered, polarization-sensitive, broadband photodetectors, and image sensor application;Zeng;Adv. Sci.,2019
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