Sensing Behavior of Atomically Thin-Layered MoS2 Transistors-Reference-Cited by-同舟云学术

Sensing Behavior of Atomically Thin-Layered MoS2 Transistors

Published:2013-06-03 Issue:6 Volume:7 Page:4879-4891
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Late Dattatray J.¹,Huang Yi-Kai¹,Liu Bin¹,Acharya Jagaran²³,Shirodkar Sharmila N.²,Luo Jiajun⁴,Yan Aiming¹,Charles Daniel¹,Waghmare Umesh V.²,Dravid Vinayak P.¹,Rao C. N. R.⁵

Affiliation:

1. Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States

2. Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560064, India

3. Central Department of Physics, Tribhuvan University, Kathmandu, 8212 Nepal

4. Department of Electrical Engineering and Computer Science, Northwestern University, Evanston Illinois 60208, United States

5. International Centre for Materials Science and CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560064, India

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn400026u

Reference63 articles.

1. Two-dimensional atomic crystals

2. Electric Field Effect in Atomically Thin Carbon Films

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Graphene transistors

5. Sub-100 nm Channel Length Graphene Transistors

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