High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory-Reference-Cited by-同舟云学术

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Published:2022 Issue:26 Volume:10 Page:9802-9812
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Giuk¹,Lee Sangho¹,Eom Taehyong¹,Kim Taeho¹,Jung Minhyun¹,Shin Hunbeom¹,Jeong Yeongseok¹,Kang Myounggon²,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea

2. Department of Electronics Engineering, Korea National University of Transportation, 50 Daehak-ro, Daesowon-Myeon, Chungju 27469, Korea

Abstract

This article presents a 3D ferroelectric NAND flash memory with a wide MW, low operation voltage, fast PGM/ERS speed, and higher endurable cycles based on a HfZrO film that shows excellent ferroelectricity even at a relatively thick thickness.

Funder

IC Design Education Center

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01608G

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