Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals-Reference-Cited by-同舟云学术

Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

Published:2019 Issue:45 Volume:9 Page:26327-26337
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Ha Minh-Tan¹²³⁴⁵^ORCID,Yu Yeong-Jae¹²³⁴,Shin Yun-Ji¹²³⁴,Bae Si-Young¹²³⁴,Lee Myung-Hyun¹²³⁴,Kim Cheol-Jin⁵⁶⁷⁴,Jeong Seong-Min¹²³⁴^ORCID

Affiliation:

1. Energy and Environmental Division

2. Korea Institute of Ceramic Engineering and Technology

3. Jinju-si 52851

4. Korea

5. Department of Ceramic Engineering

6. Gyeongsang National University

7. Jinju-si 52828

Abstract

Based on the verified multiphysics simulation, a model describing C transport contributing to crystal growth was suggested. Based on the further understanding of C transport, the growth rate was enhanced by adopting a flow modifier in the melt.

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA04930D

Reference21 articles.

1. Investigation of growth processes of ingots of silicon carbide single crystals

2. Bulk Growth of Large Area SiC Crystals

3. Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals

4. Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution

5. Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution

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