Electrical Conductivity Improvement of Point Defects in 4H-SiC
Author:
Affiliation:
1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Funder
National Science and Technology Council
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00611
Reference30 articles.
1. 4H–SiC photoconductive switching devices for use in high-power applications
2. Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
3. Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
4. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
5. A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth
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1. Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations;The Journal of Physical Chemistry B;2024-08-01
2. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01
3. Electrical conductivity improvement of charged Ga vacancies in wurtzite GaN;Materials Today Communications;2024-06
4. New Debye Temperature Model of 4H‐SiC Crystal;physica status solidi (b);2024-04-17
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