In situ fabrication of Al surface plasmon nanoparticles by metal–organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors-Reference-Cited by-同舟云学术

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In situ fabrication of Al surface plasmon nanoparticles by metal–organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors

Published:2020 Issue:5 Volume:2 Page:1854-1858
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Wu You¹²³⁴⁵,Sun Xiaojuan¹²³⁴⁵^ORCID,Shi Zhiming¹²³⁴⁵,Jia Yuping¹²³⁴⁵,Jiang Ke¹²³⁴⁵,Ben Jianwei⁶⁷⁸⁵,Kai Cuihong¹²³⁴⁵,Wang Yong¹²³⁴⁵,Lü Wei¹²³⁴⁵^ORCID,Li Dabing¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications

2. Changchun Institute of Optics, Fine Mechanics and Physics

3. Chinese Academy of Sciences

4. Changchun 130033

5. People's Republic of China

6. College of Materials Science and Engineering

7. Shenzhen University

8. Shenzhen 518071

Abstract

This work realized the in situ fabrication of Al surface plasmon nanoparticles by metal–organic chemical vapor deposition (MOCVD).

Funder

National Natural Science Foundation of China

National Basic Research Program of China

National Science Fund for Distinguished Young Scholars

Chinese Academy of Sciences

Department of Science and Technology of Jilin Province

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NA/D0NA00022A

Reference41 articles.

1. Nanoscale structure study of boron nitride nanosheets and development of a deep-UV photo-detector

2. Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

3. Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

4. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

5. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

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