Affiliation:
1. Key Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an 710049, China
2. School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
3. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK
Abstract
The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchers’ attention. Compared with the disadvantages of organic materials, such as complex molecular structure and poor stability, inorganic materials are widely used in the field of DUV detection because of their good stability, controllable growth, and other characteristics. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional detectors. Herein, the development history and types of DUV detectors are briefly introduced. Typical UWBG detection materials and their preparation methods, as well as their research and application status in the field of DUV detection, are emphatically summarized and reviewed, including III-nitride semiconductors, gallium oxide, diamond, etc. Finally, problems pertaining to DUV detection materials, such as the growth of materials, the performance of devices, and their future development, are also discussed.
Funder
National Key R&D Program of China
Fundamental Research Funds for the Central Universities
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Cited by
3 articles.
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