Highly sensitive full solar-blind ultraviolet spectrum detection and imaging based on PdSe2/Ga2O3 vdW heterojunction

Abstract

Solar-blind ultraviolet (UV) photodetectors are in great demand for both military and civilian applications. Here, we have successfully demonstrated the synthesis of the Sn-doped Ga2O3 films with controllable bandgaps to construct PdSe2/Ga2O3 van der Waals (vdW) heterojunctions achieving highly sensitive full solar-blind UV spectrum detection. The assembled device demonstrates a full solar-blind UV spectral self-powered response, with a large responsivity of 123.5 mA/W, a high specific detectivity of 1.63 × 1013 Jones, and a rapid response time of 0.15/2.3 ms. Importantly, an outstanding solar-blind UV imaging application based on an integrated PdSe2/Ga2O3 device array has been demonstrated. Our work paves a feasible path toward achieving highly sensitive solar-blind UV detecting and imaging based on wide-bandgap Ga2O3 films.