A phase field model combined with a genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics-Reference-Cited by-同舟云学术

A phase field model combined with a genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics

Published:2022 Issue:40 Volume:14 Page:14997-15009
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sugathan Sandeep¹^ORCID,Thekkepat Krishnamohan²³^ORCID,Bandyopadhyay Soumya¹^ORCID,Kim Jiyoung⁴^ORCID,Cha Pil-Ryung¹^ORCID

Affiliation:

1. School of Advanced Materials Engineering, Kookmin University, Seoul 02707, Republic of Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

3. Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, Republic of Korea

4. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA

Abstract

A novel genetic algorithm coupled phase field approach to predict the Landau coefficients and switching curves consistent with experiments for HZO ferroelectrics.

Funder

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR02678C

Reference69 articles.

1. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

4. Review and perspective on ferroelectric HfO2-based thin films for memory applications

5. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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