Compact Physical Model for Ferroelectric/Antiferroelectric/Dielectric Mixed Phase Capacitors
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
2. Components Research, Technology & Manufacturing Group, Intel Corporation, Hillsboro, OR, USA
Funder
Intel Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10415514/10335656.pdf?arnumber=10335656
Reference28 articles.
1. Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
2. Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM
3. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
4. A Circuit Compatible Accurate Compact Model for Ferroelectric-FETs
5. Computationally Efficient Ferroelectric Capacitor Model For Circuit Simulation
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