Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels-Reference-Cited by-同舟云学术

Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels

Published:2020 Issue:40 Volume:22 Page:23107-23120
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yim Jihong¹²³⁴^ORCID,Ylivaara Oili M. E.⁵⁶⁷⁴^ORCID,Ylilammi Markku³⁴,Korpelainen Virpi⁵⁶⁷⁴^ORCID,Haimi Eero¹²³⁴^ORCID,Verkama Emma¹²³⁴^ORCID,Utriainen Mikko⁵⁶⁷⁴^ORCID,Puurunen Riikka L.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemical and Metallurgical Engineering

2. Aalto University School of Chemical Engineering

3. Espoo

4. Finland

5. VTT Technical Research Centre of Finland

6. PL 1000

7. 02044 VTT

Abstract

Thin films by atomic layer deposition (ALD) raise global interest through unparalleled conformality. Saturation profiles of the archetypical trimethylaluminum-water ALD process in narrow rectangular channels create a benchmark for future studies.

Funder

Tekes

Academy of Finland

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP03358H

Reference60 articles.

1. Conformality in atomic layer deposition: Current status overview of analysis and modelling

2. New strategies for conformal, superconformal, and ultrasmooth films by low temperature chemical vapor deposition