Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment-Reference-Cited by-同舟云学术

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Published:2019 Issue:29 Volume:7 Page:8855-8860
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Janghyuk¹²³⁴,Tadjer Marko J.⁵⁶⁷,Mastro Michael A.⁵⁶⁷^ORCID,Kim Jihyun¹²³⁴^ORCID

Affiliation:

1. Department of Chemical and Biological Engineering

2. Korea University

3. Seoul 02841

4. Korea

5. US Naval Research Laboratory

6. Washington

7. USA

Abstract

The threshold voltage of β-Ga₂O₃ metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

Funder

Korea Institute of Energy Technology Evaluation and Planning

National Research Foundation of Korea

Office of Naval Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02468A

Reference36 articles.

1. Recent progress in Ga2O3power devices

2. Perspective—Opportunities and Future Directions for Ga2O3

3. Semiconductors for high‐voltage, vertical channel field‐effect transistors

4. How Much Will Gallium Oxide Power Electronics Cost?

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier;Journal of Physics D: Applied Physics;2024-06-25

2. β-Ga₂O₃ Based Bulk-Planar Junctionless Transistor for Superior Electrostatic Integrity at Sub-7nm Technology;2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI);2024-03-14

3. Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications;Materials;2023-12-18

4. 2D Amorphous GaO_X Gate Dielectric for β-Ga₂O₃ Field-Effect Transistors;ACS Applied Materials & Interfaces;2023-07-27

5. State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics;ACS Omega;2022-10-07