The impact of erbium incorporation on the structure and photophysics of silicon–germanium nanowires
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2010/NR/C0NR00476F
Reference29 articles.
1. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
2. Ultrahigh room-temperature hole mobility in a SiGe quantum well
3. Erbium-doped Si1-xGex/Si structures for light emitting diodes
4. Toward Bridging the Terahertz Gap with Silicon-Based Lasers
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1. Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires;Nanoscale;2018
2. Nanosecond laser induce size-controllable SiGe islands with high Ge composition, large aspect ratio and defect-free characteristics;Materials Letters;2018-01
3. Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes;Journal of Materials Chemistry C;2013
4. Directing photophysics and structure in semiconductor nanowires with erbium and germanium;Journal of Luminescence;2012-12
5. Erbium-Doped Mixed Oxide Nanowires of Zinc and Germanium: Role of Host Structure on Near Infrared Emission;Crystal Growth & Design;2012-04-10
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