Nanosecond laser induce size-controllable SiGe islands with high Ge composition, large aspect ratio and defect-free characteristics-Reference-Cited by-同舟云学术

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Nanosecond laser induce size-controllable SiGe islands with high Ge composition, large aspect ratio and defect-free characteristics

Published:2018-01 Issue: Volume:211 Page:250-253
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Qi Dongfeng,Huang Shihao,Wang Letian,Shi Meng,Chen Songyan,Grigoropoulos Costas P.

Funder

Natural Science Foundation of China

K.C. Wong Magna Fund

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Functional nanoscale electronic devices assembled using silicon nanowire building blocks;Cui;Science,2001

2. Silicon nanowires: the key building block for future electronic devices;Chen;J. Mater. Chem.,2007

3. Atomistic modeling of electron phonon coupling and transport properties;Schmidt;Small,2006

4. The impact of erbium incorporation on the structure and photophysics of silicon–germanium nanowires;Wu;Nanoscale,2010

5. Nanomechanical architecture of semiconductor nanomembranes;Huang,2011

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dewetting of ultrathin Ag film with random vacancy defects on a SiO₂ substrate: a molecular dynamics simulation;RSC Advances;2022

2. Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation*;Chinese Physics B;2021-09-01

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