Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping-Reference-Cited by-同舟云学术

Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

Published:2022 Issue:30 Volume:14 Page:10910-10917
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hussain Muhammad¹²^ORCID,Ali Asif¹,Jaffery Syed Hassan Abbas¹,Aftab Sikandar³^ORCID,Abbas Sohail⁴^ORCID,Riaz Muhammad¹,Bach Thi Phuong Anh¹,Raza Muhammad⁵,Iqbal Javed⁵,Hussain Sajjad¹,Sofer Zdenek²^ORCID,Jung Jongwan¹^ORCID

Affiliation:

1. Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea

2. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic

3. Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, Republic of Korea

4. Department of Electrical Engineering Riphah International University, Islamabad, Pakistan

5. Department of Physics, Karakoram International University, Gilgit, Pakistan

Abstract

A self-powered ITO/n-IGZO/p-GeSe p–n transparent device was fabricated via RF sputtering. It provides an alternative to scalable, low-cost, multifunctional transparent NIR optical sensors with selective wavelength photodetection characteristics.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR01013E

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