High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes-Reference-Cited by-同舟云学术

High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Published:2016-06-28 Issue:27 Volume:8 Page:17428-17434
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Secor Ethan B.¹,Smith Jeremy²,Marks Tobin J.¹²,Hersam Mark C.¹²³

Affiliation:

1. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

2. Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

3. Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States

Funder

Air Force Research Laboratory

Office of Naval Research

U.S. Department of Defense

Northwestern University

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b02730

Reference43 articles.

1. Materials and Applications for Large Area Electronics: Solution-Based Approaches

2. Thin-Film Transistors

3. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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