High-performance metal-oxide thin-film transistors based on inkjet-printed self-confined bilayer heterojunction channels-Reference-Cited by-同舟云学术

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High-performance metal-oxide thin-film transistors based on inkjet-printed self-confined bilayer heterojunction channels

Published:2019 Issue:20 Volume:7 Page:6169-6177
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liang Kun¹²³⁴⁵,Wang Yan⁶⁷⁸⁴⁵,Shao Shuangshuang¹²³⁴⁵,Luo Manman¹²³⁴⁵,Pecunia Vincenzo⁶⁷⁸⁴⁵^ORCID,Shao Lin¹²³⁴⁵,Zhao Jianwen¹²³⁴⁵^ORCID,Chen Zheng⁹¹⁰¹¹¹²⁵^ORCID,Mo Lixin¹³¹⁴¹⁵⁵,Cui Zheng¹²³⁴⁵

Affiliation:

1. Printable Electronics Research Center

2. Suzhou Institute of Nano-Tech and NanoBionics

3. Chinese Academy of Sciences

4. Suzhou

5. P. R. China

6. Institute of Functional Nano & Soft Materials (FUNSOM)

7. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices

8. Soochow University

9. MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials

10. College of Material Science and Engineering

11. Nanjing University of Science and Technology

12. Nanjing 210094

13. Beijing Engineering Research Center of Printed Electronics

14. Beijing Institute of Graphic Communication

15. Beijing 102600

Abstract

High-performance metal-oxide thin-film transistors, based on inkjet-printed self-confined bilayer heterojunction channels.

Funder

National Basic Research Program of China

Basic Research Program of Jiangsu Province

National Natural Science Foundation of China

Collaborative Innovation Center of Suzhou Nano Science and Technology

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC06596A

Reference48 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

4. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

5. Solution-Processed Rad-Hard Amorphous Metal-Oxide Thin-Film Transistors

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