Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy-Reference-Cited by-同舟云学术

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

Published:2015 Issue:107 Volume:5 Page:87818-87830
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kushvaha S. S.¹²³,Kumar M. Senthil¹²³,Shukla A. K.¹²³,Yadav B. S.⁴⁵³,Singh Dilip K.¹²³,Jewariya M.¹²³,Ragam S. R.¹²³,Maurya K. K.¹²³

Affiliation:

1. CSIR-National Physical Laboratory

2. New Delhi-110012

3. India

4. Solid State Physics Laboratory

5. Delhi-110054

Abstract

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.

Funder

Council for Scientific and Industrial Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA11361J

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