Photoresponse improvement of mixed-dimensional 1D–2D GaAs photodetectors by incorporating constructive interface states-Reference-Cited by-同舟云学术

Photoresponse improvement of mixed-dimensional 1D–2D GaAs photodetectors by incorporating constructive interface states

Published:2021 Issue:2 Volume:13 Page:1086-1092
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Dengkui¹²³⁴,Chen Xue¹²³⁴,Fang Xuan¹²³⁴,Tang Jilong¹²³⁴^ORCID,Lin Fengyuan¹²³⁴,Wang Xinwei¹²³⁴,Liu Guanlin¹²³⁴^ORCID,Liao Lei⁵⁶⁷⁸⁴^ORCID,Ho Johnny C.⁹¹⁰¹¹⁴^ORCID,Wei Zhipeng¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of High Power Semiconductor Lasers

2. Changchun University of Science and Technology

3. Changchun 130022

4. China

5. State Key Laboratory for Chemo/Biosensing and Chemometrics

6. School of Physics and Electronics

7. Hunan University

8. Changsha 410082

9. Department of Materials Science and Engineering

10. City University of Hong Kong

11. Hong Kong SAR 999077

Abstract

A mixed-dimensional photodetector was constructed to convert the harmful surface states of low-dimensional materials into their constructive interface states.

Funder

National Natural Science Foundation of China

Jilin Scientific and Technological Development Program

Education Department of Jilin Province

Changchun University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR06788A

Reference40 articles.