Strain controllable band alignment and the interfacial and optical properties of tellurene/GaAs van der Waals heterostructures-Reference-Cited by-同舟云学术

Strain controllable band alignment and the interfacial and optical properties of tellurene/GaAs van der Waals heterostructures

Published:2024 Issue:22 Volume:26 Page:16327-16336
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Li Gen¹,Bao Hairui¹,Peng Yange¹,Fu Xi¹²^ORCID,Liao Wenhu¹³⁴^ORCID,Xiang Changqing¹^ORCID

Affiliation:

1. College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China

2. College of Science, Hunan University of Science and Engineering, Yongzhou 425199, China

3. School of Communication and Electronic Engineering, Jishou University, Jishou 416000, China

4. Key Laboratory of Mineral Cleaner Production and Exploit of Green Functional Materials in Hunan Province, Jishou University, Jishou 416000, China

Abstract

By using first principles calculations, we theoretically investigate the electronic structures and the interfacial and optical properties of the two-dimensional tellurene (Te)–gallium arsenide (GaAs) van der Waals heterostructures (vdWHs).

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Scientific Research Foundation of Hunan Provincial Education Department

Jishou University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00560K

Reference60 articles.

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2. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

3. Rashba spin splitting and photocatalytic properties of GeC−MSSe ( M=Mo , W) van der Waals heterostructures

4. Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures

5. van der Waals graphene/MoS2 heterostructures: tuning the electronic properties and Schottky barrier by applying a biaxial strain

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