Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures-Reference-Cited by-同舟云学术

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

Published:2016-06-16 Issue:7 Volume:16 Page:4054-4061
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Pierucci Debora¹,Henck Hugo¹,Avila Jose²,Balan Adrian³⁴,Naylor Carl H.³,Patriarche Gilles¹,Dappe Yannick J.⁵,Silly Mathieu G.²,Sirotti Fausto²,Johnson A. T. Charlie³,Asensio Maria C.²,Ouerghi Abdelkarim¹

Affiliation:

1. Centre de Nanosciences et de Nanotechnologies, CNRSUniv. Paris-Sud, Université Paris-Saclay, C2N – Marcoussis, 91460 Marcoussis, France

2. Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France

3. Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, United States

4. LICSEN, NIMBE, CEA, CNRS, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France

5. SPEC, CEA, CNRS, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France

Funder

Agence Nationale de la Recherche

Division of Emerging Frontiers in Research and Innovation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b00609

Reference82 articles.

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4. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

5. Boron nitride substrates for high-quality graphene electronics

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