Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers-Reference-Cited by-同舟云学术

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Published:2012-03-01 Issue:3 Volume:12 Page:1707-1710
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Britnell Liam,Gorbachev Roman V.,Jalil Rashid,Belle Branson D.,Schedin Fred,Katsnelson Mikhail I.¹,Eaves Laurence²,Morozov Sergey V.³,Mayorov Alexander S.,Peres Nuno M. R.⁴⁵,Castro Neto Antonio H.⁵,Leist Jon⁶,Geim Andre K.,Ponomarenko Leonid A.,Novoselov Kostya S.

Affiliation:

1. Institute for Molecules and Materials, Radboud University of Nijmegen, 6525 AJ Nijmegen, The Netherlands

2. School of Physics & Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

3. Institute for Microelectronics Technology, 142432 Chernogolovka, Russia

4. Departamento de Física, Universidade do Minho, P-4710-057, Braga, Portugal

5. Graphene Research Centre and Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore

6. Momentive Performance Materials, 22557 West Lunn Road, Strongsville, Ohio 4407

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl3002205

Reference18 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Graphene: Status and Prospects

4. The electronic properties of graphene

5. Two-dimensional atomic crystals

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