Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide-Reference-Cited by-同舟云学术

Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide

Published:2017 Issue:42 Volume:9 Page:16412-16419
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Forti Stiven¹²³⁴^ORCID,Rossi Antonio¹²³⁴⁵^ORCID,Büch Holger¹²³⁴,Cavallucci Tommaso⁵⁶³⁴,Bisio Francesco⁷⁸⁴^ORCID,Sala Alessandro⁹¹⁰⁴,Menteş Tevfik Onur⁹¹⁰⁴,Locatelli Andrea⁹¹⁰⁴^ORCID,Magnozzi Michele¹¹¹²¹³⁴,Canepa Maurizio¹¹¹²¹³⁴,Müller Kathrin¹⁴¹⁵¹⁶,Link Stefan¹⁴¹⁵¹⁶,Starke Ulrich¹⁴¹⁵¹⁶,Tozzini Valentina⁵⁶³⁴,Coletti Camilla¹²³⁴¹⁷^ORCID

Affiliation:

1. Center for Nanotechnology Innovation @ NEST

2. Istituto Italiano di Tecnologia

3. 56127 Pisa

4. Italy

5. NEST

6. Istituto Nanoscienze-CNR and Scuola Normale Superiore

7. CNR-SPIN

8. 16152 Genova

9. Elettra – Sincrotrone Trieste S.C.p.A.

10. Basovizza

11. OPTMATLAB and Dipartimento di Fisica

12. Universitá degli Studi di Genova

13. Genova

14. Max-Planck-Institut für Festkörperforschung

15. D-70569 Stuttgart

16. Germany

17. Graphene Labs

Abstract

This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide (WS₂) on epitaxial graphene (EG) on SiC(0001).

Funder

FP7 Nanosciences, Nanotechnologies, Materials and new Production Technologies

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR05495E

Reference53 articles.

1. Van der Waals heterostructures

2. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature