Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper-Reference-Cited by-同舟云学术

Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

Published:2015-07-03 Issue:6 Volume:1 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Banszerus Luca¹,Schmitz Michael¹,Engels Stephan¹²,Dauber Jan¹²,Oellers Martin¹,Haupt Federica³,Watanabe Kenji⁴,Taniguchi Takashi⁴,Beschoten Bernd¹,Stampfer Christoph¹²

Affiliation:

1. JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.

2. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany.

3. JARA–Institute for Quantum Information, RWTH Aachen University, 52056 Aachen, Germany.

4. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305–0044, Japan.

Abstract

A novel dry transfer technique opens the door to large-scale CVD graphene with carrier mobilities of up to several 100,000 cm 2 V −1 s −1 .

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference39 articles.

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4. Turning off Hydrogen To Realize Seeded Growth of Subcentimeter Single-Crystal Graphene Grains on Copper

5. The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

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