Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction

Author:

Davydov Konstantin1ORCID,Zhang Xi1ORCID,Ren Wei1ORCID,Coles Matthew1ORCID,Kline Logan1ORCID,Zucker Bryan2,Watanabe Kenji3ORCID,Taniguchi Takashi4ORCID,Wang Ke1ORCID

Affiliation:

1. School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, USA.

2. Department of Physics, The Ohio State University, Columbus, OH 43221, USA.

3. Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

4. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Abstract

The valley degree of freedom in two-dimensional (2D) materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration, valley-polarized current has been realized. However, the demanding fabrication and operation requirements limit device reproducibility and scalability toward more advanced valleytronics circuits. We demonstrate a device architecture of a point junction where a valley-chiral 0D PN junction is easily configured, switchable, and capable of carrying valley current with an estimated polarization of ~80%. This work provides a building block in manipulating valley quantum numbers and scalable valleytronics.

Publisher

American Association for the Advancement of Science (AAAS)

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