The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

Author:

Hao Yufeng1,Bharathi M. S.2,Wang Lei3,Liu Yuanyue4,Chen Hua5,Nie Shu6,Wang Xiaohan1,Chou Harry1,Tan Cheng1,Fallahazad Babak7,Ramanarayan H.2,Magnuson Carl W.1,Tutuc Emanuel7,Yakobson Boris I.4,McCarty Kevin F.6,Zhang Yong-Wei2,Kim Philip8,Hone James3,Colombo Luigi9,Ruoff Rodney S.1

Affiliation:

1. Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, TX 78712, USA.

2. Institute of High Performance Computing, A*STAR, 138632, Singapore.

3. Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA.

4. Department of Mechanical Engineering and Materials Science, and Department of Chemistry, Rice University, Houston, TX 77005, USA.

5. Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA.

6. Sandia National Laboratories, Livermore, CA 94550, USA.

7. Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA.

8. Department of Physics, Columbia University, New York, NY 10027, USA.

9. Texas Instruments, Dallas, TX 75243, USA.

Abstract

Oxygen Control of Graphene Growth The growth of graphene on copper surfaces through the decomposition of hydrocarbons such as methane can result in a wide variety of crystal domain sizes and morphologies. Hao et al. (p. 720 , published online 24 October; see the cover) found that the presence of surface oxygen could limit the number of nucleation sites and allowed centimeter-scale domains to grow through a diffusion-limited mechanism. The electrical conductivity of the graphene was comparable to that of exfoliated graphene.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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