Effective surface diffusion of nickel on single crystal β-Ga2O3for Schottky barrier modulation and high thermal stability-Reference-Cited by-同舟云学术

Effective surface diffusion of nickel on single crystal β-Ga2O3for Schottky barrier modulation and high thermal stability

Published:2019 Issue:35 Volume:7 Page:10953-10960
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Hojoong¹²³⁴,Kyoung Sinsu⁵⁶⁴,Kang Taiyoung⁵⁶⁴,Kwon Jang-Yeon⁷⁸⁹⁴^ORCID,Kim Kyung Hwan¹⁰¹¹¹²⁴,Rim You Seung¹²³⁴^ORCID

Affiliation:

1. School of Intelligent Mechatronics Engineering

2. Sejong University

3. Seoul 05006

4. Republic of Korea

5. Research and Development, Powercubesemi Inc.

6. Gyeonggi-do 13449

7. School of Integrated Technology and Yonsei Institute of Convergence Technology

8. Yonsei University

9. Incheon 21983

10. Department of Electrical Engineering

11. Gachon University

12. Gyeonggi-do 13120

Abstract

β-Ga₂O₃Schottky barrier diodes (SBDs) were demonstrated with Ni Schottky contact deposited by the confined magnetic field-based sputtering (CMFS) method.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02922B

Reference36 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. Perspective—Opportunities and Future Directions for Ga2O3

3. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

4. Recent progress in Ga2O3power devices

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