Carrier tuning of 2D electron gas in field-effect devices based on Al<sub>2</sub>O<sub>3</sub>/ZnO heterostructures-Reference-Cited by-同舟云学术

Carrier tuning of 2D electron gas in field-effect devices based on Al₂O₃/ZnO heterostructures

Published:2023 Issue:28 Volume:15 Page:12071-12077
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhu Xinyi¹,Zhang Tianbao¹,He Yongjie¹,Liu Yuhang²,Zhu Hao¹^ORCID

Affiliation:

1. School of Microelectronics, Fudan University, Shanghai 200433, China

2. Institute of Semiconductor Manufacturing Research, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China

Abstract

The impact of the annealing process and oxide thickness on the 2DEG formed in the Al2O3/ZnO heterostructure is studied. FET device application with improved electrical performance is further realized based on the carrier tuning of the 2DEG system.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00157A

Reference32 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface